Title :
J-band performance of 300 nm gate length GaAs FETs
Author :
Butli, R.S. ; Hughes, A.J. ; Bennett, R.H. ; Parker, D. ; Turner, J.A. ; Turner, J.A.
Author_Institution :
Plessey Research Ltd., Northamptonshire, U. K.
Abstract :
Present noise theories
Keywords :
Bonding; Equations; FETs; Frequency; Gallium arsenide; Metallization; Noise figure; Parasitic capacitance; Resists; Thermal conductivity;
Conference_Titel :
Electron Devices Meeting, 1978 International
DOI :
10.1109/IEDM.1978.189371
