DocumentCode :
3554626
Title :
30 - 40 GHz GaAs insulated gate field effect transistors
Author :
Sugano, Takuo ; Koshiga, Fusako ; Yamasaki, Kimiyoshi ; Takahashi, Susumu
Author_Institution :
University of Tokyo, Tokyo, Japan
Volume :
24
fYear :
1978
fDate :
1978
Firstpage :
148
Lastpage :
151
Abstract :
This paper is demonstrating the feasibility of using the native oxide film on GaAs surface grown by anodic oxidation in oxygen plasma as the gate insulator of GaAs insulated gate field effect transistor (IGFET). Especially the possibility of applying photolithography to the fabrication of IGFETs with this oxide was explored and it was assured by using dry etching process. IGFETs with the gate of 1µm length were fabricated. The high frequency performance is exemplified by the maximum stable power gain of 11.7dB at 8GHz and by the cut-off frequency of the unilateral power gain of 43GHz.
Keywords :
Cutoff frequency; Dry etching; FETs; Fabrication; Gallium arsenide; Insulation; Lithography; Oxidation; Performance gain; Plasma applications;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1978 International
Type :
conf
DOI :
10.1109/IEDM.1978.189374
Filename :
1479799
Link To Document :
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