Title :
A new self-aligning contact process for MOS LSI
Author :
Muramoto, Susumu ; Hosoya, Tetsuo ; Matsuo, Seitaro
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
Abstract :
A new Self-Aligning Contact (SAC) process which forms high density contact holes and flat device surface is proposed. Several new techniques which are necessary for the SAC process are established. Especially, a plasma-reactive-sputter etching technique makes it easy to etch double layered nitride and polysilicon. The potentiality of the SAC process to the future fine pattern MOS LSI process is verified by the good yield and high performance of the fabricated 1K RAM.
Keywords :
Fabrication; Large scale integration; Oxidation; Plasma applications; Plasma chemistry; Plasma devices; Plasma properties; Resists; Silicon; Wet etching;
Conference_Titel :
Electron Devices Meeting, 1978 International
DOI :
10.1109/IEDM.1978.189383
