Title :
High-density, buried-contact CMOS/SOS static RAM´s
Author :
Dingwall, A.G.F. ; Stewart, R.G. ; Leung, B.C. ; Stricker, R.E.
Author_Institution :
Solid State Technology Center, Somerville, New Jersey
Abstract :
A new ´buried-contact´ CMOS/SOS technology allows fabrication of dense static memory cells. This technology has been applied to a family of 1K, 4K, and 16K low power static Random Access Memories based upon an 1140µ2cell. Static memory cells as small as 540µ2have, however, been successfully fabricated making such static cells the smallest yet reported.
Keywords :
CMOS memory circuits; CMOS technology; Diodes; Equivalent circuits; Fabrication; Flip-flops; Integrated circuit interconnections; Laboratories; Random access memory; Read-write memory;
Conference_Titel :
Electron Devices Meeting, 1978 International
DOI :
10.1109/IEDM.1978.189385
