• DocumentCode
    3554639
  • Title

    High-density, buried-contact CMOS/SOS static RAM´s

  • Author

    Dingwall, A.G.F. ; Stewart, R.G. ; Leung, B.C. ; Stricker, R.E.

  • Author_Institution
    Solid State Technology Center, Somerville, New Jersey
  • Volume
    24
  • fYear
    1978
  • fDate
    1978
  • Firstpage
    193
  • Lastpage
    196
  • Abstract
    A new ´buried-contact´ CMOS/SOS technology allows fabrication of dense static memory cells. This technology has been applied to a family of 1K, 4K, and 16K low power static Random Access Memories based upon an 1140µ2cell. Static memory cells as small as 540µ2have, however, been successfully fabricated making such static cells the smallest yet reported.
  • Keywords
    CMOS memory circuits; CMOS technology; Diodes; Equivalent circuits; Fabrication; Flip-flops; Integrated circuit interconnections; Laboratories; Random access memory; Read-write memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1978 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1978.189385
  • Filename
    1479810
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554639