Title :
High performance "Upward" Bipolar technology for VLSI
Author :
Agraz-Guerena, J. ; Pritchett, R.L. ; Panousis, P.T.
Author_Institution :
Bell Telephone Laboratories, Allentown, Pennsylvania
Keywords :
Boron; Circuits; Doping; Implants; Impurities; Laboratories; Oxidation; Substrates; Telephony; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1978 International
DOI :
10.1109/IEDM.1978.189389
