Title :
Radiation-tolerant high-voltage CMOS/MNOS technology
Author :
Derbenwick, G.F. ; Black, W.C., Jr.
Author_Institution :
Sandia Laboratories, Albuquerque, NM
Abstract :
A radiation-tolerant metal-gate CMOS technology has been developed for use on non-volatile MNOS integrated circuit chips. CMOS peripherals fabricated with this process are capable of the high voltage operation (> 25 V) required to drive the memory array and require only the standard seven mask levels, including passivation. One additional mask is required to define the MNOS memory devices. Fabrication and characterization of these circuits is described. Processing sequences compatible with known radiation hardening procedures have been defined.
Keywords :
CMOS integrated circuits; CMOS memory circuits; CMOS process; CMOS technology; Fabrication; Integrated circuit technology; Nonvolatile memory; Passivation; Radiation hardening; Voltage;
Conference_Titel :
Electron Devices Meeting, 1978 International
DOI :
10.1109/IEDM.1978.189393
