Huge birefringence in oxidized GaAs/AlAs optical waveguides for phase-matched nonlinear frequency conversion

Author

Fiore, A. ; Rosencher, E. ; Berger, V. ; Laurent, N. ; Vodjdani, N. ; Nagle, J.

Author_Institution

Lab. Central de Recherches, Thomson-CSF, Orsay, France

fYear

1996

fDate

7-7 June 1996

Firstpage

95

Lastpage

96

Abstract

Summary form only given. We propose use of a low index oxide to enhance birefringence in a GaAs/AlAs waveguide and obtain phase matching between TE and TM modes. As a first demonstration of the huge birefringence obtainable in these structures, we have realized a single polarization waveguide, where the TM mode is well below cutoff at 1.06 /spl mu/m wavelength because of a thin AlAs layer converted into oxide.

Keywords

III-V semiconductors; aluminium compounds; birefringence; gallium arsenide; optical frequency conversion; optical waveguides; oxidation; 1.06 micron; GaAs-AlAs; GaAs/AlAs optical waveguide; TE mode; TM mode; birefringence; low index oxide; nonlinear frequency conversion; phase matching; single polarization waveguide; Absorption; Birefringence; Frequency conversion; Gallium arsenide; Nonlinear optics; Optical frequency conversion; Optical waveguides; Oxidation; Polarization; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865616