Title :
A CMOS/SOS electrically alterable read only memory
Author_Institution :
RCA Laboratories, Somerville, New Jersey
Abstract :
A new low voltage nonvolatile memory cell has been fabricated using standard CMOS/SOS processing. The cell can be programmed at 10V, conducts 400µA when programmed, and can be electrically erased in 10 ms. Using this cell, a 2K prototype EAROM has been built which dissipates only 50 µW @5V, retains data for 17.3 years at 125°C, and has endurance in excess of 300 write/erase cycles.
Keywords :
CMOS process; CMOS technology; EPROM; Logic arrays; Logic devices; Nonvolatile memory; Pulse amplifiers; Silicon; Variable structure systems; Voltage;
Conference_Titel :
Electron Devices Meeting, 1978 International
DOI :
10.1109/IEDM.1978.189424
