Title :
Schottky barrier photodiodes in Hg1-xCdxTe
Author :
Polla, D.L. ; Sood, A.K.
Author_Institution :
Honeywell Electro-Optics Center, Lexington, Massachusetts
Abstract :
Schottky Barrier photodiodes have been fabricated on p-Hg1-xCdxTe (0.20≤ × ≤ 0.38) with aluminum, chromium, lead and manganese as barrier metals. Various electrical characterizations have been carried out to determine barrier heights and the results are found to be in excellent agreement with theory. These photodiodes have also been used to determine the minority carrier lifetime and diffusion length in p-Hg1-xCdxTe.
Keywords :
Charge carrier lifetime; Chromium; Current measurement; Infrared detectors; Manganese; Mercury (metals); Photodiodes; Schottky barriers; Schottky diodes; Temperature;
Conference_Titel :
Electron Devices Meeting, 1978 International
DOI :
10.1109/IEDM.1978.189443
