DocumentCode
355472
Title
Band mobility of photoexcited electrons in Bi/sub 12/Si/sub 20/
Author
Biaggio, I. ; Hellwarth, R.W. ; Partanen, J.P.
Author_Institution
Dept. of Phys., Univ. of Southern California, Los Angeles, CA, USA
fYear
1996
fDate
7-7 June 1996
Firstpage
101
Abstract
Summary form only given. Here we measure the band mobility in n-BSO and its temperature dependence by observing the dark diffusion of excited electrons before trapping takes place. In the experiments we excite a sinusoidal distribution of electrons with a 30 ps laser pulse and observe their diffusion in the first few nanoseconds after excitation, during which they remain in the conduction band.
Keywords
bismuth compounds; conduction bands; diffusion; excited states; high-speed optical techniques; photorefractive materials; thermo-optical effects; 30 ps; Bi/sub 12/Si/sub 20/; band mobility; conduction band; dark diffusion; diffusion; excitation; excited electrons; few nanoseconds; n-BSO; photoexcited electrons; ps laser pulse; sinusoidal distribution; temperature dependence; trapping; Bismuth; Charge carrier processes; Diffraction gratings; Electron mobility; Electron traps; Laser excitation; Physics; Probes; Temperature dependence; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-444-0
Type
conf
Filename
865623
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