DocumentCode :
3554726
Title :
Hybrid InSb focal plane array fabrication
Author :
Hoendervoogt, R.M. ; Kormos, K.A. ; Rosbeck, J.P. ; Toman, J.R. ; Burgett, C.B.
Author_Institution :
Santa Barbara Research Center, Goleta, California
Volume :
24
fYear :
1978
fDate :
1978
Firstpage :
510
Lastpage :
512
Abstract :
Large two-dimensional photovoltaic infrared detector arrays have been produced using the hybrid combination of InSb coupled to a silicon CCD. The hybridization process uses indium interconnect pads, which electrically couple each InSb photodiode to a CCD input structure. The entire InSb array is optically thin to allow the backside illumination of the InSb for high packing density. This process is also applicable to other intrinsic detector materials, such as InGaSb and HgCdTe. Production of 32 × 32 mosaic arrays with elements on 4-mil centers has demonstrated high interconnect yield and reliability. Fabrication of larger 58 × 62 arrays of similar design is progressing.
Keywords :
Charge coupled devices; Couplings; Indium; Infrared detectors; Optical arrays; Optical device fabrication; Photovoltaic systems; Sensor arrays; Silicon; Solar power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1978 International
Type :
conf
DOI :
10.1109/IEDM.1978.189466
Filename :
1479891
Link To Document :
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