Achieving accuracy in transistor and thyristor modeling

There has been a great deal of progress both in the area of device modeling as well as in quantifying many of the physical phenomena operating in-silicon. However, there are questions as to the consistency of the various models and there are uncertainties in as to the formulations of many of the important physical phenomena. In this paper the consistency between the present "exact" theory and three other models will be examined in the context of analyzing a diode, transistor, and a thyristor. In addition, the significance of the differences in the various band gap narrowing formulations will be investigated. The connection between doping and SRH lifetime, the importance of Auger recombination in bipolar transistors, a formulation for carrier-carrier scattering, and the temperature dependence of the carrier mobilities will also be studied.