DocumentCode
3554755
Title
High speed GaAs CCD
Author
Deyhimy, I. ; Harris, J.S. ; Eden, R.C. ; Edwall, D.D. ; Anderson, R.J.
Author_Institution
Rockwell International Science Center, Thousand Oaks, California
Volume
24
fYear
1978
fDate
1978
Firstpage
617
Lastpage
619
Abstract
A GaAs CCD with high transfer efficiency is described and implications for high speed devices fabricated with this technology are described.
Keywords
Bandwidth; Charge coupled devices; Charge transfer; Clocks; FETs; Frequency; Gallium arsenide; Integrated circuit technology; Power dissipation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1978 International
Type
conf
DOI
10.1109/IEDM.1978.189493
Filename
1479918
Link To Document