High speed bipolar CCD input structure

A new and novel bipolar structure has been formulated for use with high speed charge coupled devices. The new CCD input structure addresses and overcomes the limitations inherent in conventional CCD input structures. Specifically the technique for metering analog charge packets into this CCD does not require multiple operations nor special clocking or gating pulses. Also, this bipolar input structure reduces significantly the effects of parasitic capacitance through the use of a bipolar mirror circuit geometry. Computer calculations predict that the operating bandwidth of this input structure should exceed one gigahertz bandwidth. Moreover, calculations show that the transfer linearity is significantly better than 1% as evident from ac and dc distortion analysis. The geometry of this bipolar input structure is process compatible with buried channel CCD.