Isolation of GaP LED using electron irradiation II

The resistivity of GaP crystal changed from ∼0.5Ω-cm to ∼10⁹Ω-cm and an original orange colour of the crystal varied to black by 1∼7 MeV electron irradiation. It is useful for isolating GaP junction devices. In the present paper, the spatial distributions of red luminescence in a linelike region irradiated by scanned electron beam with ∼32µm width were investigated using a scanning electron microscope (SEM). Also the annealing behavior and the electron energy dependence of the two-dimensional distribution profiles of damage defect density in GaP were obtained experimentally by using a microdensitometer and the theoretical profiles were estimated by a Monte Carlo simulation.