A fully implanted V-groove power MOSFET

This paper presents a microwave V-Groove Silicon Power MOSFET (VMOS) with drain to source breakdown voltage of 100V and drain current capability of 0.5A, and a forward transconductance of 150 millimho. A gain-bandwidth product (fT) of 1.5 GHz has been measured. The power density of this enhancement device is about 20KW/cm²of the active area. A refractory metal scheme has been used for improved device reliability. Ion implantation has been utilized in processing the device in order to obtain process control and good threshold voltage uniformity. A theoretical model of the device has been developed, and experimental data are compared with simple theory.