Title :
A 600 volt MOSFET with near ideal on resistance
Author :
Temple, V.A.K. ; Love, R.P.
Author_Institution :
General Electric Company, Schenectady, New York
Abstract :
Two experimental 600 Volt power MOSFETs with a vertical source-drain geometry have been fabricated for megahertz power control applications. These devices are similar in design, differing chiefly in current capability. Both devices feature a unique use of ion implant for near ideal breakdown voltage and an intentionally large gate-drain overlap region to reduce device on-resistance at the expense of a lower frequency response.
Keywords :
Breakdown voltage; Electric breakdown; Electric resistance; Frequency response; Geometry; Implants; MOSFET circuits; Power MOSFET; Power control; Research and development;
Conference_Titel :
Electron Devices Meeting, 1978 International
DOI :
10.1109/IEDM.1978.189506
