DocumentCode
3554779
Title
Taper isolated dynamic gain RAM cell
Author
Chatterjee, Pallab K. ; Taylor, G.W. ; Malwah, M.
Author_Institution
Texas Instruments, Incorporated, Dallas, Texas
Volume
24
fYear
1978
fDate
1978
Firstpage
698
Lastpage
699
Abstract
This paper describes a one-transistor only, ROM-like dynamic RAM cell, which operates on the principle of a dynamic change in gain or threshold of the device constituting the cell. There is no capacitor in this cell. This concept is radically different from the principle of operation of the conventional one-transistor storage memory cell, which actually consists of a storage capacitor in addition to one transistor, and which stores and senses a fixed charge packet.
Keywords
Capacitors; DRAM chips; Electrodes; Implants; Instruments; Laboratories; MOSFETs; Random access memory; Read-write memory; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1978 International
Type
conf
DOI
10.1109/IEDM.1978.189516
Filename
1479941
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