Title :
Two-dimensional numerical analysis of normally-off type buried channel MOSFET´s
Author :
Oka, H. ; Nishiuchi, K. ; Nakamura, T. ; Ishikawa, H.
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
Two-dimensional numerical analysis of BC(Buried Channel) MOS FETs is performed to investigate short channel behavior of this device. Mechanism of device operation, current path, maximum drain voltage and short channel effects of BC MOS FETs are examined with various device parameters. A design principles of a short channel device are obtained. A test device with a submicron channel length, fabricated according to these principles, is mentioned.
Keywords :
Circuits; Electron traps; FETs; Impurities; Laboratories; Numerical analysis; Substrates; Testing; Very large scale integration; Voltage;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189531
