DocumentCode
3554832
Title
Two-dimensional numerical analysis of normally-off type buried channel MOSFET´s
Author
Oka, H. ; Nishiuchi, K. ; Nakamura, T. ; Ishikawa, H.
Author_Institution
Fujitsu Laboratories Ltd., Kawasaki, Japan
Volume
25
fYear
1979
fDate
1979
Firstpage
30
Lastpage
33
Abstract
Two-dimensional numerical analysis of BC(Buried Channel) MOS FETs is performed to investigate short channel behavior of this device. Mechanism of device operation, current path, maximum drain voltage and short channel effects of BC MOS FETs are examined with various device parameters. A design principles of a short channel device are obtained. A test device with a submicron channel length, fabricated according to these principles, is mentioned.
Keywords
Circuits; Electron traps; FETs; Impurities; Laboratories; Numerical analysis; Substrates; Testing; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1979 Internationa
Type
conf
DOI
10.1109/IEDM.1979.189531
Filename
1480396
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