Title :
A very small Schottky barrier diode (SBD) with self-aligned guard ring for VLSI applications
Author_Institution :
IBM General Technology Division, Essex Junction, Vermont
Abstract :
A new method for producing a self-aligned SBD guard ring, which uses a minimum of the device area, has been developed. The guard ring was achieved by a boron diffusion around a diffusion barrier such as molybdenum, through an undercut region at the diode periphery formed by the differential etching of a dual insulator (silicon nitride over thermal oxide).
Keywords :
Aluminum; Bipolar integrated circuits; Boron; Dielectrics; Etching; Large scale integration; Schottky barriers; Schottky diodes; Silicon compounds; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189537
