Measurement of two-dimensional profiles near locally oxidized regions

Accuracy of the surface impurity profile measurement method is examined using a two-dimensional device analysis. This method is used to measure the temperature dependent lateral penetration of lateral channel stop diffusions in an NMOS process. Measurements have also been used to study the lateral effect of oxidation in the diffusion of boron atoms in nonoxidizing regions. Enhancement of diffusivity within 1.5 microns lateral distance are close to that of oxidized regions, while enhancement becomes very small in areas removed by more than 4 microns.