DocumentCode
3554844
Title
Measurement of two-dimensional profiles near locally oxidized regions
Author
Lee, Hee-Gook ; Dutton, Robert W.
Author_Institution
Stanford University, Stanford, CA, USA
Volume
25
fYear
1979
fDate
1979
Firstpage
65
Lastpage
69
Abstract
Accuracy of the surface impurity profile measurement method is examined using a two-dimensional device analysis. This method is used to measure the temperature dependent lateral penetration of lateral channel stop diffusions in an NMOS process. Measurements have also been used to study the lateral effect of oxidation in the diffusion of boron atoms in nonoxidizing regions. Enhancement of diffusivity within 1.5 microns lateral distance are close to that of oxidized regions, while enhancement becomes very small in areas removed by more than 4 microns.
Keywords
Atomic measurements; Impurities; Integrated circuit measurements; Interpolation; MOSFETs; Poisson equations; Spline; Surface fitting; Surface reconstruction; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1979 Internationa
Type
conf
DOI
10.1109/IEDM.1979.189541
Filename
1480406
Link To Document