DocumentCode
3554849
Title
Power MOSFET technology
Author
Lidow, A. ; Herman, T. ; Collins, H.W.
Author_Institution
International Rectifier Corporation, El Segundo, California
Volume
25
fYear
1979
fDate
1979
Firstpage
79
Lastpage
83
Abstract
The recent development of high performance power MOSFET´s threatens the Bipolar transistor monopoly on power control. Analysis of the presently available devices reveals several areas of superior performance. Properly designed power MOSFET´s exhibit ultra-high speed operation, freedom from second breakdown, excellent temperature stability and large avalanche current capability. Near term improvements now under development suggest that power MOSFET´s will have a dominant position in the 500 Volt and under power control market.
Keywords
Bipolar transistors; Bonding; Breakdown voltage; Clamps; Diodes; Insulation; MOSFET circuits; Power MOSFET; Silicon on insulator technology; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1979 Internationa
Type
conf
DOI
10.1109/IEDM.1979.189545
Filename
1480410
Link To Document