Design construction, and performance of high power RF VMOS devices

Silicon RF Power VMOS devices with gate widths of 65.3 cm and drain area of 8.51mm²have been designed and constructed. Gm to 6 mhos, Vdss of 150 volts, and Rdsat of .16 have been observed. Single-ended power output over 150 watts cw with 10db gain at 150 MHz from 50 volt supply, and push-pull broadband (2-45 MHz) linear power output above 300 watts PEP have been measured. Direct comparison to geometrically identically identical bipolar devices will be discussed, with regard to gain, current handling capability, power output, linearity, ruggedness against load mismatch, and thermal profile under high VSWR conditions.