Title :
Triggerable semiconductor lasers
Author :
Copeland, J.A. ; Abbott, S.M. ; Holden, W.S.
Author_Institution :
Bell Laboratory, Holmdel, New Jersey
Abstract :
A triggerable semiconductor laser emits light in very short (0.1 nS) intense (0.1 W) pulses with a few nS period when biased a fraction of a mA above a threshold current. Single, uniform lightwave pulses can be triggered by fractional-mA current pulses up to several nS in duration. This behavior was first seen in computer simulations of devices with a high electron-trap density (other causes are possible). Devices exhibiting this behavior have been found among the population of AlGaAs stripe lasers made by deep proton bombardment. A simple lightwave pulse regenerator has been built by adding a photodiode with less than unity gain. This circuit emits lightwave pulses with 6 pJ energy, less than 0.2 ns duration, and with an amplitude that is up to 15 times larger than the input pulse.
Keywords :
Computer simulation; Electron optics; Electron traps; Optical pulses; Protons; Pulse circuits; Pulse compression methods; Repeaters; Semiconductor lasers; Threshold current;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189552