• DocumentCode
    3554871
  • Title

    Fabrication and characterization of ZnO piezoelectric films for sensor devices

  • Author

    Shiosaki, T. ; Yamamoto, T. ; Kawabata, A. ; Muller, R.S. ; White, R.M.

  • Author_Institution
    Kyoto University, Kyoto, Japan
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    151
  • Lastpage
    154
  • Abstract
    Films of ZnO grown by planar magnetron sputtering have excellent qualities: 1) c-axis orientation of the ZnO film of such presision that the angular distribution of c-axis is smaller than 1° across a 4cm field for a 10cm target, 2) uniform etch properties over the same area indicating that the piezoelectric polarity is the same over the film, 3) thicknesses up to 48µm with a transparency and surface smoothness similar to those of a glass substrate, 4) an optical waveguide loss for the TE0mode of He-Ne 6328Å line as low as 2.1dB/ cm in a 3.2µm thick film without post-sputtering treatment, 5) effective surface wave coupling coefficients greater than 90% of the theoretical values of ZnO/substrate composite with a high reproducibility, 6) a sputtering rate as high as 10µm/h without metal backing on ZnO ceramic target without reducing the film quality.
  • Keywords
    Fabrication; Optical films; Optical surface waves; Piezoelectric films; Sensor phenomena and characterization; Sputtering; Substrates; Surface treatment; Surface waves; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189565
  • Filename
    1480430