DocumentCode
3554871
Title
Fabrication and characterization of ZnO piezoelectric films for sensor devices
Author
Shiosaki, T. ; Yamamoto, T. ; Kawabata, A. ; Muller, R.S. ; White, R.M.
Author_Institution
Kyoto University, Kyoto, Japan
Volume
25
fYear
1979
fDate
1979
Firstpage
151
Lastpage
154
Abstract
Films of ZnO grown by planar magnetron sputtering have excellent qualities: 1) c-axis orientation of the ZnO film of such presision that the angular distribution of c-axis is smaller than 1° across a 4cm field for a 10cm target, 2) uniform etch properties over the same area indicating that the piezoelectric polarity is the same over the film, 3) thicknesses up to 48µm with a transparency and surface smoothness similar to those of a glass substrate, 4) an optical waveguide loss for the TE0 mode of He-Ne 6328Å line as low as 2.1dB/ cm in a 3.2µm thick film without post-sputtering treatment, 5) effective surface wave coupling coefficients greater than 90% of the theoretical values of ZnO/substrate composite with a high reproducibility, 6) a sputtering rate as high as 10µm/h without metal backing on ZnO ceramic target without reducing the film quality.
Keywords
Fabrication; Optical films; Optical surface waves; Piezoelectric films; Sensor phenomena and characterization; Sputtering; Substrates; Surface treatment; Surface waves; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1979 Internationa
Type
conf
DOI
10.1109/IEDM.1979.189565
Filename
1480430
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