DocumentCode :
3554880
Title :
A new structure for VLSI bipolar technology
Author :
Seegebrecht, Peter K. ; Kim, Wonchan
Author_Institution :
Institut für Theoretische Elektrotechnik der RWTH-Aachen, Aachen, West-Germany
Volume :
25
fYear :
1979
fDate :
1979
Firstpage :
184
Lastpage :
187
Abstract :
A novel bipolar process which is complementary to the collector diffused isolation (CDI) process but compatible with the standard buried collector (SBC) process will be presented. The application of it to ECL. and I2L circuits show the advantages of small circuit size and improved performance.
Keywords :
Circuit testing; Coupling circuits; Doping; Electrical resistance measurement; Fabrication; Isolation technology; Logic circuits; Resistors; Transistors; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
Type :
conf
DOI :
10.1109/IEDM.1979.189574
Filename :
1480439
Link To Document :
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