A high speed I2L compatible with high voltage analog devices

This paper reports a new approach for realizing a high speed I²L and a high voltage analog circuit simultaneously on a single chip. One significant feature of the new technology is in its high current gain capability for the I²L inverters. Another feature is a precise controllability of the Gummel number for the I²L intrinsic base, utilizing phosphorus and boron double implantations. Typical values of upward current gain for a fan-out of 1 I²L gate and for a fan-out of 10 I²L gate are 45 and 13, respectively. The maximum operating frequency of a divide-by-two I²L circuit is 5.5 MHz and a power-delay product is 0.18 pJ. A high BV^CEOof 75 V of the analog transistor is achieved with a toggle frequency of 2.2 MHz for the I²L flip flop circuit.