• DocumentCode
    3554884
  • Title

    A 1 µm bipolar VLSI technology

  • Author

    Evans, S.A. ; Morris, S.A. ; Englade, J. ; Fuller, C.R. ; Arledge, L.A.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, Texas, USA
  • fYear
    1979
  • fDate
    3-5 Dec. 1979
  • Firstpage
    196
  • Lastpage
    200
  • Abstract
    A 1 µm VLSI process technology has been developed for the fabrication of bipolar circuits. The process employs e-beam slice writing, plasma processing, ion implantation and low temperature diffusion/annealing to fabricate bipolar device structures with a minimum feature size of 0.9 µm. The process has been demonstrated by building a scaled LSI, I2L microprocessor chip (SBP0400) with a minimum feature size of 1 µm. The process technology is discussed; I2L performance and density as a function of minimum line width is given.
  • Keywords
    Annealing; Circuits; Fabrication; Ion implantation; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma temperature; Very large scale integration; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189577
  • Filename
    1480442
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554884