Title :
Sub-nanosecond self-aligned I2L/MTL circuits
Author :
Tang, D.D. ; Ning, T.H. ; Wiedman, S.K. ; Isaac, R.D. ; Feth, G.C. ; Yu, H.N.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y.
Abstract :
This paper describes a self-aligned approach to the I2L/MTL technology. Experimental ring oscillator circuits designed with 2.5 µm design rules and fabricated with this technology show a measured 0.9 ns gate delay at Ic= 70 µA (fan-in=1, fan-out=3).
Keywords :
Aluminum; CMOS technology; Delay; Diodes; Equivalent circuits; Rails; Resistors; Ring oscillators; Very large scale integration; Wiring;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189578
