Title :
Device and circuit fabrication and physical characterization of pulsed-laser-annealed polysilicon on SiO2and Si3N4
Author :
Lam, Hon-Wai ; Shah, Rajiv R. ; Tasch, Al, Jr. ; Crosthwait, Llyod
Author_Institution :
Texas Instruments Incorporated, Dallas, Texas
Abstract :
MOSFETs were fabricated in frequency-doubled Nd:YAG laser annealed silicon on oxide and nitride, with or without a square grid pattern etched in the insulators. Electron mobility in the range of 200 to 300 cm2/volt-sec had been measured, with highest carrier mobility measured in devices fabricated on oxide with the etched grid pattern.
Keywords :
Annealing; Electron mobility; Etching; Frequency; Insulation; Laser theory; MOSFETs; Optical device fabrication; Pulse circuits; Silicon;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189582
