MOS Device and material characterization of laser annealed implanted polysilicon

Laser annealing is becoming an attractive process technology for low temperature non-furnace annealing of polysilicon and silicon. This paper describes physical characterization of implanted polysilicon layers annealed with a pulsed laser. Electrical characterization of diode and capacitor structures are also presented. Increase in grain size and reduction in sheet resistances of the polysilicon were observed. Low flat band voltages and interface charge densities and long bulk carrier lifetimes can be achieved through laser annealing followed by low temperature thermal annealing normally used in MOS device processing.