Title :
Application of laser processing for improved oxides grown from polysilicon
Author :
Yaron, Giora ; Hess, L.D. ; Kokorowski, S.A. ; Kokorowski, S.A.
Author_Institution :
National Semiconductor, Santa Clara, CA, USA
Abstract :
Laser annealing techniques were successfully incorporated into standard MOS processing to improve the quality of oxides grown over polysilicon. Polysilicon films (5000 Å thick) deposited over 1000 Å SiO2, grown over
Keywords :
Annealing; Capacitors; Circuits; Current measurement; Etching; Laser applications; Leakage current; Optical pulses; Pulsed laser deposition; Silicon;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189584
