• DocumentCode
    3554891
  • Title

    Application of laser processing for improved oxides grown from polysilicon

  • Author

    Yaron, Giora ; Hess, L.D. ; Kokorowski, S.A. ; Kokorowski, S.A.

  • Author_Institution
    National Semiconductor, Santa Clara, CA, USA
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    220
  • Lastpage
    223
  • Abstract
    Laser annealing techniques were successfully incorporated into standard MOS processing to improve the quality of oxides grown over polysilicon. Polysilicon films (5000 Å thick) deposited over 1000 Å SiO2, grown over
  • Keywords
    Annealing; Capacitors; Circuits; Current measurement; Etching; Laser applications; Leakage current; Optical pulses; Pulsed laser deposition; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189584
  • Filename
    1480449
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554891