Title :
RF annealing of radiation-induced electron traps in MOS structures
Author :
Ma, T.P. ; Chin, M.R.
Author_Institution :
Yale University, New Haven, Connecticut
Abstract :
RF annealing technique has been successfully applied to remove the radiation-induced electron traps in MOS capacitors and n-channel MOSFET´s. The experimental details, including the annealing apparatus, sample fabrication and irradiation, sample measurements, and data analysis will be reported. Some possible mechanisms leading to the removal of neutral traps will be discussed.
Keywords :
Annealing; Contamination; Electron emission; Electron traps; MOS capacitors; MOSFET circuits; Plasma applications; Plasma confinement; Radio frequency; Silicon;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189585
