Title :
High voltage thin layer devices (RESURF devices)
Author :
Appels, J.A. ; Vaes, H.M.J.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Abstract :
The application of a somewhat unusual diode structure opens the possibility to make novel kinds of high voltage devices even with very thin epitaxial or implanted layers. In the new structures crucial changes in the electric field distribution take place at or at least near the surface. The acronym RESURF (REduced SURface Field) was chosen.
Keywords :
Bipolar transistors; Breakdown voltage; Conductivity; Diodes; Doping; Electric breakdown; Epitaxial layers; Laboratories; P-n junctions; Substrates;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189589
