Title :
High power static induction thyristor
Author :
Terasawa, Y. ; Miyata, K. ; Murakami, S. ; Nagano, T. ; Okamura, M.
Author_Institution :
Hitachi, Ltd., Hitachi, Ibaraki, Japan
Abstract :
Two types of static induction thyristors have been developed. The forward blocking voltage and the maximum gate turn-off current of these devices are 800 V, 100 A and 2.5 kV, 500 A, respectively. It has been shown that these devices gave a high forward voltage blocking gain, high current gate turn-off capability, fast gate turn-off speed, high di/dt and dv/dt capabilities and high allowable operating temperature.
Keywords :
Anodes; Gold; Laboratories; Low voltage; P-i-n diodes; Temperature; Thyristors;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189592
