Title :
A monolithic GaAs X-band power amplifier
Author :
Pucel, R.A. ; Vorhaus, J. ; Ng, P. ; Fabian, W.
Author_Institution :
Raytheon Company, Waltham, Massachusetts
Abstract :
The work reported in this paper concerns the design, technology, and microwave performance of a single stage, monolithic X-band FET power amplifier with on-chip (printed) matching circuits. The use of "via" holes for low-inductance grounding and air-bridge source overlay connections for paralleling the individual FET cells is illustrated. The evolution of the chip design from a single FET circuit, exhibiting 500 mW output at 9.5 GHz, to a two-FET combiner, and finally to a four-FET combiner with over 2 watts output, is described.
Keywords :
Design automation; Frequency; Gallium arsenide; Microstrip; Microwave FETs; Microwave circuits; Microwave devices; Microwave integrated circuits; Power amplifiers; Substrates;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189597
