Title :
Progress in broad-band GaAs monolithic amplifiers
Author :
Gupta, A.K. ; Higgins, J.A. ; Decker, D.R.
Author_Institution :
Rockwell International Electronic Research Center, Thousand Oaks, California
Abstract :
Monolithic microwave amplifiers showing gain from 0 to 8 GHz have been fabricated on semi-insulating GaAs. These amplifiers utilized MESFET devices with gate lengths of approximately 0.75 µm and gate widths of 300 µm. The active devices were used to provide both gain and impedance matching. The performance of these amplifiers is promising and indicates that stable, high gain, microminiature gain modules can be made by this ´monolithic microwave integrated circuit´ (MMIC) technology.
Keywords :
Gallium arsenide; Impedance matching; Integrated circuit technology; MESFETs; MMICs; Microwave amplifiers; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Performance gain;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189598
