DocumentCode
3554907
Title
Progress in broad-band GaAs monolithic amplifiers
Author
Gupta, A.K. ; Higgins, J.A. ; Decker, D.R.
Author_Institution
Rockwell International Electronic Research Center, Thousand Oaks, California
Volume
25
fYear
1979
fDate
1979
Firstpage
269
Lastpage
272
Abstract
Monolithic microwave amplifiers showing gain from 0 to 8 GHz have been fabricated on semi-insulating GaAs. These amplifiers utilized MESFET devices with gate lengths of approximately 0.75 µm and gate widths of 300 µm. The active devices were used to provide both gain and impedance matching. The performance of these amplifiers is promising and indicates that stable, high gain, microminiature gain modules can be made by this ´monolithic microwave integrated circuit´ (MMIC) technology.
Keywords
Gallium arsenide; Impedance matching; Integrated circuit technology; MESFETs; MMICs; Microwave amplifiers; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Performance gain;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1979 Internationa
Type
conf
DOI
10.1109/IEDM.1979.189598
Filename
1480463
Link To Document