DocumentCode
3554908
Title
Status of microwave devices in Japan
Author
Irie, Toshiaki
Author_Institution
Nippon Electric Company Ltd., Kawasaki, Japan
Volume
25
fYear
1979
fDate
1979
Firstpage
273
Lastpage
276
Abstract
Recent progress of microwave semiconductor devices in Japan, especially of GaAs MES FETs, is so remarkable that they are establishing increasingly important positions for advancing the-state-of-the-art in many applications. This paper reviews the present status and future prospects for microwave devices in Japan.
Keywords
Bipolar transistors; Diodes; FETs; Gallium arsenide; Microwave devices; National electric code; Noise figure; Semiconductor device noise; Semiconductor devices; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1979 Internationa
Type
conf
DOI
10.1109/IEDM.1979.189599
Filename
1480464
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