Title :
Status of microwave devices in Japan
Author_Institution :
Nippon Electric Company Ltd., Kawasaki, Japan
Abstract :
Recent progress of microwave semiconductor devices in Japan, especially of GaAs MES FETs, is so remarkable that they are establishing increasingly important positions for advancing the-state-of-the-art in many applications. This paper reviews the present status and future prospects for microwave devices in Japan.
Keywords :
Bipolar transistors; Diodes; FETs; Gallium arsenide; Microwave devices; National electric code; Noise figure; Semiconductor device noise; Semiconductor devices; Silicon;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189599
