DocumentCode
3554910
Title
SOS MESFET processing technology for microwave integrated circuits
Author
Barnard, J. ; Huang, R.-S. ; Frey, Jeffrey
Author_Institution
Cornell University, Ithaca, New York
Volume
25
fYear
1979
fDate
1979
Firstpage
281
Lastpage
284
Abstract
Three technologies for the fabrication of SOS MESFET´s and their integration in microwave subsystems are described. Each technique has a singular advantage in either fabrication simplicity, potential for large drain-gate breakdown, or maximum ft. All technologies described are based on standard silicon IC processing techniques and allow easy integration of standard microwave IC lumped elements on insulating substrates.
Keywords
Etching; Fabrication; Hydrogen; Insulation; Integrated circuit technology; MESFET integrated circuits; Microwave integrated circuits; Microwave technology; Production; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1979 Internationa
Type
conf
DOI
10.1109/IEDM.1979.189601
Filename
1480466
Link To Document