Title :
SOS MESFET processing technology for microwave integrated circuits
Author :
Barnard, J. ; Huang, R.-S. ; Frey, Jeffrey
Author_Institution :
Cornell University, Ithaca, New York
Abstract :
Three technologies for the fabrication of SOS MESFET´s and their integration in microwave subsystems are described. Each technique has a singular advantage in either fabrication simplicity, potential for large drain-gate breakdown, or maximum ft. All technologies described are based on standard silicon IC processing techniques and allow easy integration of standard microwave IC lumped elements on insulating substrates.
Keywords :
Etching; Fabrication; Hydrogen; Insulation; Integrated circuit technology; MESFET integrated circuits; Microwave integrated circuits; Microwave technology; Production; Silicon on insulator technology;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189601
