DocumentCode :
3554919
Title :
Physics underlying recent improvements in silicon solar-cell performance
Author :
Lindholm, F.A. ; Fossum, J.G.
Author_Institution :
University of Florida, Gainesville, Florida, USA
Volume :
25
fYear :
1979
fDate :
1979
Firstpage :
304
Lastpage :
307
Abstract :
This paper provides a unifying view of the physics of silicon solar cells, and uses it as a basis for explaining how recent improvements in the performance of these cells have been achieved. The unification is facilitated by a region-by-region analysis of the solar cell, which is also used to compare several recently proposed cell structures.
Keywords :
Doping; Lighting; P-n junctions; Performance analysis; Performance loss; Photovoltaic cells; Physics; Silicon; Technological innovation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
Type :
conf
DOI :
10.1109/IEDM.1979.189609
Filename :
1480474
Link To Document :
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