High pressure oxidation for isolation of high speed bipolar devices

High pressure oxidation has been applied to the oxide isolation of high speed bipolar LSI, with fully ion-implanted shallow junctions and multilevel metallization. A sorter oxidation time for the thick field oxide brought about a smaller redistribution of impurities of a buried collector, which resulted in almost 30 % higher breakdown voltage of devices and also a smaller base-collector capacitance (CTC). A propagation delay time of an ECL gate was improved approximately 10% at low power operation due to the small CTC. A minimum delay time of 0.6 nsec/gate with power consumpation of 1.3 mW(0.8 pJ) was obtained. Oxidation induced defects were greatly influenced with high pressure oxidation temperature, and the optimum temperature was found to be around 1050°C. A master/slice ECL gate array including 900 internal gates was fabricated by utilizing high pressure oxidation technology. The device performance was characterized by the average propagation delay time of 0.9 nsec/gate(1.2 pJ) and chip power consumption of 1.5 watts.