DocumentCode :
3554931
Title :
Nature and mechanism of emitter-collector short in oxide isolated bipolar integrated circuits
Author :
Shinada, Kazuyoshi ; Shinozaki, Satoshi ; Kurosawa, K. ; Taniguchi, Kenji
Author_Institution :
NTIS Incorporated, Kanagawa, Japan
Volume :
25
fYear :
1979
fDate :
1979
Firstpage :
344
Lastpage :
347
Abstract :
Nature and mechanism of emitter-collector short of npn transistors in bipolar integrated circuits have been investigated for a device made by means of oxide isolation and arsenic emitter diffusion. The role of oxidation-induced dislocation, generated during the isolation process, plays predominant role on the emitter-collector short, because diffusion of arsenic tends to be anomalously deep along the oxidation-induced dislocation array. Conditions under which the generation of dislocations can be avoided are obtained for combinations of buffer oxide thickness and nitride thickness used as a mask for the isolation oxidation.
Keywords :
Bipolar integrated circuits; Bipolar transistor circuits; Boundary conditions; Etching; Fabrication; Furnaces; Isolation technology; Laboratories; Oxidation; Stacking;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
Type :
conf
DOI :
10.1109/IEDM.1979.189620
Filename :
1480485
Link To Document :
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