Title :
Nature and mechanism of emitter-collector short in oxide isolated bipolar integrated circuits
Author :
Shinada, Kazuyoshi ; Shinozaki, Satoshi ; Kurosawa, K. ; Taniguchi, Kenji
Author_Institution :
NTIS Incorporated, Kanagawa, Japan
Abstract :
Nature and mechanism of emitter-collector short of npn transistors in bipolar integrated circuits have been investigated for a device made by means of oxide isolation and arsenic emitter diffusion. The role of oxidation-induced dislocation, generated during the isolation process, plays predominant role on the emitter-collector short, because diffusion of arsenic tends to be anomalously deep along the oxidation-induced dislocation array. Conditions under which the generation of dislocations can be avoided are obtained for combinations of buffer oxide thickness and nitride thickness used as a mask for the isolation oxidation.
Keywords :
Bipolar integrated circuits; Bipolar transistor circuits; Boundary conditions; Etching; Fabrication; Furnaces; Isolation technology; Laboratories; Oxidation; Stacking;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189620