DocumentCode
3554944
Title
Fabrication and microwave performance of the permeable base transistor
Author
Bozler, C.O. ; Alley, G.D. ; Murphy, R.A. ; Flanders, D.C. ; Lindley, W.T.
Author_Institution
Massachusetts Institute of Technology, Lexington, Massachusetts
Volume
25
fYear
1979
fDate
1979
Firstpage
384
Lastpage
387
Abstract
A new transistor with the potential for extremely high frequency performance has been fabricated. A two-dimensional numerical simulation has indicated that a transistor with a maximum frequency of oscillation approaching 1000 GHz is achievable. The unique feature of this device is an extremely fine tungsten grating which is embedded inside a single crystal of n-type gallium arsenide.
Keywords
Electron emission; Fabrication; Frequency; Gallium arsenide; Gratings; Microwave transistors; Poisson equations; Schottky barriers; Substrates; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1979 Internationa
Type
conf
DOI
10.1109/IEDM.1979.189632
Filename
1480497
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