DocumentCode
3554968
Title
Refractory silicides for low resistivity gates and interconnects
Author
Murarka, S.P.
Author_Institution
Bell Laboratories, Murray Hill, NJ, USA
Volume
25
fYear
1979
fDate
1979
Firstpage
454
Lastpage
457
Abstract
The applicability of various refractory metal silicides as high conductivity metallization will be discussed with special reference to their compatibility with the VLSI processing. In particular, the formation, properties and oxidation characteristics of the silicides of titanium and tantalum will be reviewed. It will be shown that these silicides show a high degree of promise as high conductivity gate metals.
Keywords
Conductivity; Delay; Metallization; Oxidation; Silicides; Silicon carbide; Sputtering; Temperature; Titanium; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1979 Internationa
Type
conf
DOI
10.1109/IEDM.1979.189654
Filename
1480519
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