Optimization, performance and limitations of monolithic polycrystalline silicon distributed RC devices

New monolithic distributed resistor-capacitor structures (DRCs) for the realization of unique high-performance integrated filters have been characterized, optimized, and realized. These devices are implemented in polycrystalline silicon utilizing its unique properties such as high resistivity and linearity, controllable temperature sensitivity, associated distributed capacitance, and complete compatibility with both BJT and MOST fabrication processes. Parameters affecting thee properties have been studied, characterized, and used for the optimization and limitation analysis of the distributed devices. Highly-reproducible monolithic constant phase-shift filters have been fabricated simultaneously with bipolar devices resulting a frequency response accurate to within 0.04 dB over a range of 100 Hz to 40 kHz. A lumped realization of such filters would require at least 20 components with a matching better than 0.5% and more than five times increase in chip area.