The challenge between junction diodes and MIS InSb infrared detectors for monolithic linear arrays

The progress achieved with indium antimonide technology enables us now to produce large-scale (128 elements) infrared detector arrays of the photovoltaic (junction diodes) as well as of the metal-insulator-semiconductor (MIS) types (1), (2), (3), (4), (5). Both of these detector types share the same underlying physical principle (carrier generation in a space-charged zone). They operate at 77 K and their near-BLIP performance characteristics (D^*near 3 to 4 × 10¹¹cm(Hz)^1/2W^-1) are similar. Due to the simplicity of the MIS technology and the excellent performance resulting from this detector type, MIS sensor arrays may begin to replace p-n junction diode arrays in many imaging or surveillance systems(6).