Monolithic HgCdTe charge injection devices

Certain high performance infrared system applications can be met by x-y addressable area array sensors where the center-to-center spacing of the image resolution elements is small while at the same time the signal to noise ratio is high. We have designed and fabricated 32×32 charge injection devices (CIDs) on mercury cadmium telluride of approximately 5 µm cutoff wavelength to achieve these goals. The device design and fabrication are summarized, and the important observations of good charge transfer efficiency (>99.5%), high storage times in the MIS wells, and optical response uniformity are presented. Based on the present experimental data, 3-5 µm monolithic mercury cadmium telluride arrays are promising devices for staring IR imaging system.