DocumentCode
3555006
Title
A novel single-device-well MOSFET gate
Author
Hamdy, E.Z. ; Elmasry, M.I. ; El-Mansy, Y.A.
Author_Institution
University of Waterloo, Waterloo, Ontario, Canada
Volume
25
fYear
1979
fDate
1979
Firstpage
576
Lastpage
580
Abstract
A novel MOSFET structure based on merging an enhancement type device and a depletion type device in a Single Device Well (SDW) is introduced. The SDW structure utilizes the inherent two dimensional geometry of a MOSFET device well to obtain two devices perpendicular to each other, having the same gate. The two perpendicular currents of the devices in the merged structure are analyzed. An analytical model is developed and circuit CAD simulations is performed. A single SDW structure can realize a complete gate and some circuit examples are given.
Keywords
Analytical models; Circuit optimization; Doping; Geometry; Isolation technology; Large scale integration; MOSFET circuits; Merging; Surface resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1979 Internationa
Type
conf
DOI
10.1109/IEDM.1979.189689
Filename
1480554
Link To Document