Compatible VVMOS and NMOS technology for power MOS IC´s

This paper presents a process which allows simultaneous fabrication of VVMOS power devices and planar NMOS devices resulting in MOS power integrated circuits for such applications as switching voltage regulators and display drivers. The characteristics and limitations of the process are discussed and experimental results obtained on devices and simple circuits using aluminum gate NMOST driving circuitry and power VVMOST outputs are presented.