• DocumentCode
    3555014
  • Title

    The effect of interpoly structure variation on charge transfer efficiency of a buried channel CCD

  • Author

    Chen, C.L. ; Venkateswaran, K. ; Seto, J. ; Amelio, G.F.

  • Author_Institution
    Fairchild Camera and Instrument Co., San Jose, California
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    606
  • Lastpage
    610
  • Keywords
    Boron; Charge coupled devices; Charge transfer; Clocks; Degradation; Electrodes; Fabrication; Implants; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189697
  • Filename
    1480562
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555014