DocumentCode :
3555014
Title :
The effect of interpoly structure variation on charge transfer efficiency of a buried channel CCD
Author :
Chen, C.L. ; Venkateswaran, K. ; Seto, J. ; Amelio, G.F.
Author_Institution :
Fairchild Camera and Instrument Co., San Jose, California
Volume :
25
fYear :
1979
fDate :
1979
Firstpage :
606
Lastpage :
610
Keywords :
Boron; Charge coupled devices; Charge transfer; Clocks; Degradation; Electrodes; Fabrication; Implants; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
Type :
conf
DOI :
10.1109/IEDM.1979.189697
Filename :
1480562
Link To Document :
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